Smart SiC MOSFET accelerated lifetime testing

Accelerated Lifetime Testing of OLED Luminaires

The Experience with SiC MOSFET and Buck Converter Snubber Design

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison wi...

Carrier Lifetime Relevant Deep Levels In SiC

Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. These defects provide energy levels within the bandgap and may act...

SiC MOSFET soot sensor in a co - fired LTCC package .

A novel method for soot detection based on SiC MOSFET devices with a dual suspended/ floating gate configuration in a co-fired LTCC package has been investigated. Response to different concentrations of soot was measured through the application of an electric field between the two gate electrodes to attract charged soot onto the sensor surface. Results are promising with ap plication areas from...

Smart Hardware-Accelerated Volume Rendering

For volume rendering of regular grids the display of view-plane aligned slices has proven to yield both good quality and performance. In this paper we demonstrate how to merge the most important extensions of the original 3D slicing approach, namely the pre-integration technique, volumetric clipping, and advanced lighting. Our approach allows the suppression of clipping artifacts and achieves h...